Carbon doping of In/sub x/Ga/sub 1-x/As by MOCVD using CCl/sub 4/

Author

Stockman, S.A. ; Hanson, A.W. ; Curtis, A.P. ; Stillman, G.

Author_Institution

Illinois Univ., Urbana, IL, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

40

Lastpage

43

Abstract

The use of CCl/sub 4/ as a carbon doping source for In/sub x/Ga/sub 1-x/As grown by LP-MOCVD (low-pressure metal-organic chemical vapor deposition) has been investigated for In concentrations as high as x=0.53. P-type conduction was obtained over the entire composition range studied, with hole concentrations above 1*10/sup 20/ cm/sup -3/ for x<0.12, and as high as 4.7*10/sup 18/ cm/sup -3/ for In/sub 0.53/Ga/sub 0.47/As lattice-matched to InP. Very low V/III ratios were necessary to achieve high carbon concentrations. For the growth conditions employed, the alloy composition was found to be highly dependent on several growth parameters, including CCl/sub 4/ partial pressure, V/III ratio, and growth temperature. Samples grown at low temperature ( approximately 500 degrees C) exhibited an increase in hole concentration upon post-growth annealing.<>

Keywords

III-V semiconductors; carbon; chemical vapour deposition; gallium arsenide; indium compounds; semiconductor doping; In/sub x/Ga/sub 1-x/As:C; MOCVD; hole concentrations; low-pressure metal-organic chemical vapor deposition; semiconductor; Annealing; Conducting materials; Gallium arsenide; Indium gallium arsenide; Indium phosphide; MOCVD; Organic materials; Semiconductor device doping; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235706

Filename

235706