Title :
Passivation of InP for MISFET applications
Author :
Viktorovitch, P. ; Gendry, M. ; Hollinger, G. ; Krawczyk, S. ; Tardy, J.
Author_Institution :
Lab. d´´Electronique-Ecole Centrale de Lyon, Ecully, France
Abstract :
The development of appropriate passivation schemes for III-V compound semiconductors is of considerable interest for application to high-speed, high-power and electrooptic devices and integrated circuits. Attention is given here to InP in connection with insulated gate technology for MISFET applications. A brief survey of the interfacial electronic properties of insulator-InP systems and a general description of the authors´ approach to the passivation of InP are given. Specific passivation procedures based on the formation of interfacial native oxides and on surface stabilization by arsenic and sulfur are presented for illustration.<>
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; passivation; InP; MISFET applications; electrooptic devices; high-power; high-speed; insulated gate technology; integrated circuits; passivation; semiconductors; Dielectrics and electrical insulation; Fabrication; Frequency; Indium phosphide; Interface states; Kinetic theory; MISFETs; Microwave devices; Passivation; Shape;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235709
