Title :
MeV implantation of the group IV elements in InP
Author :
Ridgway, M.C. ; Jagadish, C. ; Thompson, T.D. ; Johnson, S.T.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Electrical and photoluminescence (PL) measurements have been used to investigate megaelectronvolt implantation of InP with Group-IV elements (C, Si, Ge, and Sn). For a 700 degrees C/10-s rapid thermal annealing cycle, dopant activation increases from C, Ge, Si, to Sn while carrier mobility decreases with increasing implanted ion mass. The former trend suggests that the amphoteric nature of the Group-IV elements and dopant-defect interactions significantly influence relative dopant activation while nonstoichiometry and Fe redistribution have a lesser effect. PL measurements correlate well with the electrical results; overall PL emission intensity increases with increasing annealing temperature and decreasing implanted ion mass. Preliminary results suggest that a peak at approximately 1.65 mu m is associated with a Group-IV element and an implantation-induced defect.<>
Keywords :
III-V semiconductors; carbon; carrier density; carrier mobility; germanium; impurity electron states; indium compounds; ion implantation; luminescence of inorganic solids; photoluminescence; rapid thermal processing; semiconductor doping; silicon; tin; InP:C; InP:Ge; InP:Si; InP:Sn; carrier mobility; dopant activation; dopant-defect interactions; implantation-induced defect; megaelectronvolt implantation; nonstoichiometry; photoluminescence; rapid thermal annealing cycle; semiconductor; Electric resistance; Electric variables measurement; Indium phosphide; Iron; Photoluminescence; Power measurement; Rapid thermal annealing; Surface resistance; Temperature; Tin;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235710
