High speed InGaAs/InP HBT-based OEIC photoreceivers

Author

Chandrasekhar, S.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

67

Lastpage

70

Abstract

The author reviews multigigabit photoreceivers incorporating p-i-n photodetectors and HBT (heterojunction bipolar transistor)-based preamplifiers realized in the InP/InGaAs material system. High-speed p-i-n/HBT photoreceivers have been demonstrated with performance close to that of the best hybrid receivers. By adopting a fabrication methodology which is transportable, the technology was successfully implemented using materials from three different crystal growth techniques. Speeds up to 10 Gb/s have been achieved and the prospects appear bright for further progress in the field.<>

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; photodetectors; 10 Gbit/s; HBT-based OEIC photoreceivers; InP-InGaAs; heterojunction bipolar transistor; multigigabit photoreceivers; p-i-n photodetectors; preamplifiers; semiconductor; Bipolar transistors; Crystalline materials; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optoelectronic devices; PIN photodiodes; Photodetectors; Preamplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235713

Filename

235713