DocumentCode :
3309226
Title :
A 600 Mbit/s monolithically integrated InP/InGaAs pin-JFET transimpedance receiver by planar technology
Author :
Lauterbach, C. ; Albrecht, H. ; Romer, D. ; Walter, J.W. ; Muller, J. ; Ebbinghaus, G.
Author_Institution :
Siemens Res. Lab., Munich, Germany
fYear :
1992
fDate :
21-24 April 1992
Firstpage :
74
Lastpage :
77
Abstract :
The device fabrication of a planar monolithically integrated InP/InGaAs optical transimpedance receiver is described. The device technology is based on a single-step MOVPE (metal-organic vapor-phase epitaxy) process and local doping via ion implantation. The transimpedance receiver designed for 600-Mb/s transmission systems comprises a cascode input gain stage and a source follower to provide a 50- Omega output impedance. The receiver circuit contains a p-i-n photodiode, three junction field-effect transistors, and five resistors for adjusting the transistor operating points. At a wavelength of 1300 nm, a receiver responsivity of -29 dBm has been obtained with a bit error rate of 10/sup -9/ at a data rate of 600 Mb/s NRZ (nonreturn-to-zero) signal.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; 1300 nm; 600 Mbit/s; InP-InGaAs; cascode input gain stage; device fabrication; ion implantation; local doping; metal-organic vapor-phase epitaxy; p-i-n photodiode; planar monolithically integrated InP/InGaAs optical transimpedance receiver; planar technology; receiver circuit; semiconductor; single-step MOVPE; source follower; three junction field-effect transistors; Epitaxial growth; FETs; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Integrated optics; Optical device fabrication; Optical devices; Optical receivers; Particle beam optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
Type :
conf
DOI :
10.1109/ICIPRM.1992.235715
Filename :
235715
Link To Document :
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