Vertically-integrated InGaAsP/InP two-wavelength all-optical latch/AND gate

Author

An, X. ; Geib, K.M. ; Hafich, M.J. ; Crumbaker, T.E. ; Silvestre, P. ; Beyette, F.R., Jr. ; Feld, S.A. ; Robinson, G.Y. ; Wilmsen, C.W.

Author_Institution

Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

82

Lastpage

85

Abstract

A novel optoelectronic device which functions either as an optically controlled gated latch or as an optical AND gate is demonstrated. This device utilizes two different wavelengths (2 lambda ) of input light and is composed of two heterojunction phototransistors with different bandgaps vertically integrated with a light emitting diode. The device structure was fabricated from InGaAsP/InP epitaxial layers grown by gas-source molecular-beam epitaxy. The single-mesa structure of the devices is amenable to large-dimensional array fabrication and the 2 lambda approach makes the input alignment to such an array easier.<>

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical logic; semiconductor growth; InGaAsP-InP; gas-source molecular-beam epitaxy; light emitting diode; optical AND gate; optically controlled gated latch; optoelectronic device; semiconductor; single-mesa structure; two-wavelength all-optical latch/AND gate; vertically integrated; Epitaxial layers; Heterojunctions; Indium phosphide; Light emitting diodes; Optical control; Optical devices; Optoelectronic devices; Photonic band gap; Phototransistors; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235717

Filename

235717