The use of an in-situ ECR hydrogen plasma to remove the oxide from InP substrates prior to epitaxial growth

Author

Robinson, B.J. ; Thompson, D.A. ; Hofstra, P.G. ; Balcaitis, G. ; McMaster, S.A.

Author_Institution

McMaster Univ., Hamilton, Ont., Canada

fYear

1992

fDate

21-24 April 1992

Firstpage

90

Lastpage

92

Abstract

The authors present results of studies on the use of a hydrogen plasma generated by an electron cyclotron resonance (ECR) source in-situ in an MBE (molecular beam epitaxy) growth chamber to remove the surface oxide on InP at temperatures significantly lower than thermal desorption temperatures, thereby eliminating the risk of surface decomposition. It is shown that, for substrate temperatures as low as 400 degrees C, an ECR hydrogen plasma operating with an excess P/sub 2/ flux on the sample surface may be used to remove the oxide from InP substrates prior to epitaxial growth. A typical exposure for this treatment is short (>

Keywords

III-V semiconductors; indium compounds; surface treatment; 400 degC; H plasma; InP substrates; decomposition; electron cyclotron resonance; epitaxial growth; surface oxide; Cyclotrons; Electron beams; Hydrogen; Indium phosphide; Molecular beam epitaxial growth; Plasma sources; Plasma temperature; Resonance; Substrates; Thermal decomposition;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235719

Filename

235719