Title :
Gas source molecular beam epitaxial growth and characterization of InP on GaAs
Author :
Droopad, R. ; Choi, K.Y. ; Shiralagi, K.T. ; Puechner, R.A. ; Maracas, G.N.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
Heteroepitaxial growth of thick (up to 5 mu m) InP on GaAs by gas-source molecular beam epitaxy is investigated using in-situ reflection high-energy electron diffraction and low-temperature photoluminescence experiments. The initial stages of growth are characterized by a Stranski-Krastanov growth mode. Above the critical thickness for dislocation formation, 3-D islands are formed having sloping sides oriented along the
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; reflection high energy electron diffraction; semiconductor growth; 3-D islands; CBE; GSMBE; GaAs; InP-GaAs; RHEED; Stranski-Krastanov growth mode; characterization; dislocation formation; excitonic transitions; gas-source molecular beam epitaxy; high-optical-quality epitaxial material; in-situ reflection high-energy electron diffraction; low-temperature photoluminescence experiments; semiconductor; sloping sides; Epitaxial layers; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Molecular beam epitaxial growth; Optical reflection; Photoluminescence; Stimulated emission; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235720
