DocumentCode :
3309318
Title :
Fourth International Conference on Indium Phosphide and Related Materials (Cat. No.92CH3104-7)
fYear :
1992
fDate :
21-24 April 1992
Abstract :
Presents the cover from the proceedings of this conference.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; semiconductor quantum wells; semiconductor thin films; solar cells; HBT; HEMT; InP-based materials; characterization technologies; chemical beam epitaxy; doping; epitaxy; growth; heterojunction bipolar transistor; high electron mobility transistor; lasers; quantum wells; semiconductor; solar cells; strain and mismatch;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
Type :
conf
DOI :
10.1109/ICIPRM.1992.235727
Filename :
235727
Link To Document :
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