Title :
Magnetic Tunnel Junctions with Assymetric Barriers
Author :
Beletskii, N.N. ; Borysenko, S.A.
Author_Institution :
Usikov Inst. of Radiophys. & Electron., Nat. Acad. of Sci. of Ukraine, Kharkov
Abstract :
In this paper, magnetic tunnel junctions (MTJs) with a low asymmetric barrier are presented. These MTJs can be described by the two-band model of free electrons in ferromagnetic electrodes. The influence of image forces on the tunneling magnetoresistance (TMR) and on the electron current density in MTJs are taken into account. It is shown that the electron current density in the low barrier MTJs is quite enough for the current-driven magnetization switching of the ferromagnetic electrodes. The results obtained here extend considerably the knowledge about the physics of tunnel processes in magnetic nanostructures and can be used for developing MTJs with desired parameters.
Keywords :
current density; ferromagnetic materials; magnetic switching; magnetisation; tunnelling magnetoresistance; asymmetric barrier; current-driven magnetization switching; electron current density; ferromagnetic electrodes; free electrons; image forces; magnetic tunnel junctions; tunneling magnetoresistance; two-band model; Current density; Electrodes; Electrons; Magnetic switching; Magnetic tunneling; Magnetization; Physics; Shape; Temperature; Tunneling magnetoresistance;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1237-4
DOI :
10.1109/MSMW.2007.4294752
