Magnetic Tunnel Junctions with Assymetric Barriers

Author

Beletskii, N.N. ; Borysenko, S.A.

Author_Institution

Usikov Inst. of Radiophys. & Electron., Nat. Acad. of Sci. of Ukraine, Kharkov

Volume

2

fYear

2007

fDate

25-30 June 2007

Firstpage

611

Lastpage

613

Abstract

In this paper, magnetic tunnel junctions (MTJs) with a low asymmetric barrier are presented. These MTJs can be described by the two-band model of free electrons in ferromagnetic electrodes. The influence of image forces on the tunneling magnetoresistance (TMR) and on the electron current density in MTJs are taken into account. It is shown that the electron current density in the low barrier MTJs is quite enough for the current-driven magnetization switching of the ferromagnetic electrodes. The results obtained here extend considerably the knowledge about the physics of tunnel processes in magnetic nanostructures and can be used for developing MTJs with desired parameters.

Keywords

current density; ferromagnetic materials; magnetic switching; magnetisation; tunnelling magnetoresistance; asymmetric barrier; current-driven magnetization switching; electron current density; ferromagnetic electrodes; free electrons; image forces; magnetic tunnel junctions; tunneling magnetoresistance; two-band model; Current density; Electrodes; Electrons; Magnetic switching; Magnetic tunneling; Magnetization; Physics; Shape; Temperature; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on

Conference_Location

Kharkov

Print_ISBN

1-4244-1237-4

Type

conf

DOI

10.1109/MSMW.2007.4294752

Filename

4294752