The Novel Heterojunction CdHgCrSe/MnHgTe as the Candidate for Electron Spin Devices

Author

Bondarev, A.A. ; Ivanchenko, I.V. ; Karelin, Yu ; Popenko, N.A. ; Paranchich, S.Yu. ; Paranchich, L.D.

Author_Institution

Usikov Inst. for Radiophys. & Electron., NAS of Ukraine, Kharkiv

Volume

2

fYear

2007

fDate

25-30 June 2007

Firstpage

620

Lastpage

622

Abstract

This paper presents the results of investigations of the ESR spectra and volt-ampere characteristics of heterojunctions CdHgCrSe/MnHgTe with the aim to explore the possibilities of their applications in the electron spin devices. Based on the experimental results it may be concluded that the novel heterojunction CdHgCrSe/MnHgTe could not be used as a spin filter. It is also noted that despite the almost linear behaviour of the volt-ampere characteristics of this heterojunction there are the encouraging prerequisites for EM radiation from the this kind of heterojunction.

Keywords

II-VI semiconductors; cadmium compounds; chromium compounds; ferromagnetic materials; magnetoelectronics; manganese compounds; mercury compounds; paramagnetic resonance; semiconductor heterojunctions; semimagnetic semiconductors; spin polarised transport; CdHgCrSe-MnHgTe; EM radiation; ESR spectra; diluted magnetic semiconductors; electron spin device; ferromagnetic-nonmagnetic semiconductor heterojunction; spin-polarized transport; volt-ampere characteristics; Electromagnetic radiation; Electron devices; Flexible manufacturing systems; Frequency; Heterojunctions; Magnetic field measurement; Magnetic semiconductors; Paramagnetic resonance; Spin polarized transport; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on

Conference_Location

Kharkov

Print_ISBN

1-4244-1237-4

Type

conf

DOI

10.1109/MSMW.2007.4294755

Filename

4294755