DocumentCode
330979
Title
Electric field-caused redistribution of mobile charged donors in semiconductors
Author
Sheinkman, M.K. ; Kashirina, N.I. ; Kislyuk, V.V.
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Kyiv, Ukraine
Volume
1
fYear
1998
fDate
6-10 Oct 1998
Firstpage
89
Abstract
The theoretical analysis is made for the opportunity of redistributing mobile point defects in a semiconductor affected by the electric field. It is assumed that the electric field is formed by voltage applied in two different ways: (i) directly to a sample, (ii) to a capacitor plates with a sample between
Keywords
electric field effects; impurity states; point defects; semiconductors; capacitor plate; electric field; mobile charged donor redistribution; point defect; semiconductor; Cadmium compounds; Capacitors; Differential equations; Electrons; Physics; Poisson equations; Semiconductor devices; Space charge; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.732290
Filename
732290
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