Title :
Band discontinuities in MBE GaAlAs/GaAs/GaAlAs quantum wells from capacitance measurements
Author :
Saxena, Ashok K.
Author_Institution :
Dept. of Electron. & Comput. Eng., Roorkee Univ., India
Abstract :
It is shown that capacitance spectroscopy on MBE grown GaAlAs/GaAs/GaAlAs quantum wells using Schottky barrier diodes combined with PL measurements provides a powerful fool in determining the band off-sets if the well is considered as a `giant´ trap. The conduction and valence band off-sets have been determined to be 72% and 28% of GaAs/GaAlAs band gap difference
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; band structure; capacitance; gallium arsenide; molecular beam epitaxial growth; photoluminescence; semiconductor quantum wells; GaAlAs-GaAs-GaAlAs; MBE GaAlAs/GaAs/GaAlAs quantum well; Schottky barrier diode; band discontinuity; band gap; capacitance spectroscopy; conduction band offset; photoluminescence measurement; valence band offset; Capacitance measurement; Electron emission; Electron traps; Energy states; Gallium arsenide; Kinetic theory; Quantum capacitance; Quantum mechanics; Schottky diodes; Temperature;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732292
