Title :
Review and prospects for VPE, MOVPE, MBE and CBE (MOMBE) of InP and related materials
Author :
Mircea, A. ; Alexandre, F. ; Decobert, J. ; Goldstein, L. ; Harmand, J.-C. ; Ougazzaden, A.
Author_Institution :
France Telecom, France
Abstract :
The market for InP-based epitaxies is still small and the different production methods coexist. Novel sources may renew the interest in solid source MBE. In MOVPE and CBE the tendency is towards lower temperatures and increased safety. Two novel families of materials are studied. The main challenges are cheap optoelectronic devices for the subscriber access network and very high speed microelectronics
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; CBE; InP; MBE; MOMBE; MOVPE; VPE; epitaxial growth; high speed microelectronics; optoelectronic device; solid source MBE; subscriber access network; Epitaxial growth; Epitaxial layers; Indium phosphide; Microelectronics; Molecular beam epitaxial growth; Optoelectronic devices; Production; Safety; Solids; Temperature;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732334
