DocumentCode
331005
Title
Sol-gel TiO2(La) films as gate dielectric in MOS structures
Author
Simeonov, S. ; Kaedjiiska, E. ; Szekeres, Anna ; Parlog, Constantza ; Gartner, Mariuca
Author_Institution
Inst. of Solid State Phys., Sofia, Bulgaria
Volume
1
fYear
1998
fDate
6-10 Oct 1998
Firstpage
217
Abstract
1 MHz C-V and G-V characteristics of undoped and doped with La TiO 2 films prepared by sol-gel technique were measured. It was found that low concentration of La in TiO2 leads to an increase of the dielectric permittivity and a decrease of the oxide conductance. The average density of oxide defects increases with increasing the doping concentration. La/Ti atomic ratio of 0.22 results in a dramatic decrease of permittivity and in a strong generation of acceptor-like defects
Keywords
MIS structures; capacitance; dielectric thin films; electrical conductivity; lanthanum; permittivity; sol-gel processing; titanium compounds; 1 MHz; La doping; MOS structure; TiO2; TiO2:La; acceptor; capacitance; conductance; defect density; dielectric permittivity; gate dielectric; sol-gel TiO2 film; Capacitance-voltage characteristics; Conductive films; Dielectric films; Dielectric measurements; Doping; Permittivity measurement; Physics; Solid state circuits; Temperature measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.732350
Filename
732350
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