Electrical properties of sandwich structures with aluminum nitride layers

Author

Tanase, Mihaela ; Morosanu, C. ; Dumitru, V. ; Tugulea, Laura ; Tomozeiu, N.

Author_Institution

Nat. Inst. of Mater. Phys., Bucharest, Romania

Volume

1

fYear

1998

fDate

6-10 Oct 1998

Firstpage

221

Abstract

Electrical properties of adherent, low stressed aluminum nitride films prepared by magnetron sputtering have been studied. Arrhenius plots in the 100°-170°C range of temperature and transient current curves with different bias steps (at room temperature and 150°C) have been performed. The conduction activation energy has been found and its dependence on subsequent annealings has been studied. A phenomenological conduction model at the ITO-AlN interface based on the shape of the transient curves has been elaborated. The conditions of behaviour of AlN as a highly insulating layer (sputtering conditions, thicknesses, annealing temperatures) have been established

Keywords

MIS structures; aluminium compounds; annealing; electrical conductivity; insulating thin films; sputtered coatings; 100 to 170 C; AlN-ITO; AlN-InSnO; Arrhenius plot; ITO-AlN interface; MIS sandwich structure; activation energy; aluminum nitride; annealing; electrical conduction; insulating layer; magnetron sputtering; transient curve; Aluminum nitride; Dielectric films; Dielectric thin films; Dielectrics and electrical insulation; Hysteresis; Nitrogen; Performance evaluation; Radio frequency; Sandwich structures; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.732352

Filename

732352