Title :
Heterostructures design optimisation
Author :
Dima, G. ; Mitrea, O. ; Govoreanu, B. ; Antonoiu, G ; Schoenmaker, W. ; Salmer, G. ; Profirescu, M.D.
Author_Institution :
Univ. Politehnica of Bucharest, Romania
Abstract :
In this paper, the optimisation of heterostructure devices using Design of Experiments and Response Surface Model approaches is presented. As an example, the structural optimisation of a pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8 As/GaAs pulse doped HEMT is discussed
Keywords :
III-V semiconductors; aluminium compounds; design of experiments; gallium arsenide; high electron mobility transistors; indium compounds; optimisation; semiconductor device models; semiconductor heterojunctions; surface fitting; Al0.2Ga0.8As-In0.2Ga0.8 As-GaAs; design of experiments; design optimisation; heterostructure device; pseudomorphic Al0.2Ga0.8As/In0.2As/GaAs pulse doped HEMT; response surface model; Ballistic transport; Circuit simulation; Computer science; Cutoff frequency; Design optimization; Doping; Electric breakdown; Power generation; Research and development; US Department of Energy;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732355
