DocumentCode :
331010
Title :
Preparation and properties of electrodeposited InSe and Cux Se thin films
Author :
Obreja, Paula ; Corici, A. ; Radovici, O.
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Volume :
1
fYear :
1998
fDate :
6-10 Oct 1998
Firstpage :
233
Abstract :
InSe and CuxSe thin films have been obtained by electrochemical method onto indium-tin oxide substrate from aqueous acidic solutions. The samples were characterized by visible spectrophotometers. The quality of materials strongly depends on deposition potentials and annealing process, which have to be applied after film deposition
Keywords :
III-VI semiconductors; annealing; copper compounds; electrodeposition; indium compounds; semiconductor growth; semiconductor materials; semiconductor thin films; visible spectra; CuxSe thin film; CuSe; InSe; InSe thin film; annealing; aqueous acidic solution; electrochemical deposition; electrodeposition; indium-tin oxide substrate; visible spectrophotometry; Annealing; Conductivity; Electrodes; Optical films; Optical saturation; Photonic band gap; Semiconductor materials; Semiconductor thin films; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
Type :
conf
DOI :
10.1109/SMICND.1998.732357
Filename :
732357
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=331010
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