Title :
Growth mechanism of light emitting silicon nanostructures
Author :
Pluguru, R. ; Cracium, G. ; Mendez, B. ; Piqueras, J.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
Structural changes in the amorphous silicon layers have been investigated as process to obtain light emitting silicon nanostructures. It was evidenced that, under 1013 and 1014 cm-2 implantation, nanosized crystalline structures grow in the amorphous matrix. Cathodoluminescence spectra with an 400 nm intense band and 580, 650 weak bands are characteristic for higher dose implanted and anodized layers. The structural changes are correlated with the emission properties in the 400-670 nm range
Keywords :
anodised layers; cathodoluminescence; crystallisation; elemental semiconductors; ion implantation; nanostructured materials; silicon; 400 to 670 nm; Si:B; amorphous layer; anodization; boron ion implantation; cathodoluminescence spectra; crystalline structure; growth; light emission; silicon nanostructure; Amorphous materials; Boron; Chemicals; Crystallization; Grain size; Hafnium; Nanostructures; Silicon; Temperature; X-ray diffraction;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732358
