Title :
Determination of the best incidence angle for ellipsometric measurements
Author :
Radoi, Rodica ; Flueraru, Costel
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
Spectroscopic ellipsometry (SE) is a non-destructive optical method for physical characterization of thin films. From cosΔ and tanψ (simulated data) is possible to evaluate the best incidence angle in order to obtain the thickness, the composition, the refractive index and the dielectric functions of SiO2 layers and interfaces with the least errors
Keywords :
dielectric function; dielectric thin films; ellipsometry; refractive index measurement; silicon compounds; thickness measurement; SiO2; SiO2 thin film; composition; dielectric function; incidence angle; interface; nondestructive optical measurement; refractive index; spectroscopic ellipsometry; thickness; Dielectric measurements; Dielectric thin films; Goniometers; Optical films; Optical polarization; Optical reflection; Optical refraction; Phase measurement; Research and development; Thickness measurement;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732361
