Ellipsometric studies of SOI structures

In this work the multiangle ellipsometry and electron Auger spectroscopy are employed to investigate the optical properties and elemental composition of SOI structures with hidden dielectric layers. The Δ and ψ dependence on the implantation and heat treatment conditions is examined. The MAI ellipsometric data at 632.8 nm are fitted with the multilayer models. The optic multilayer model was constructed based on the sputter depth profiling data obtained by Auger spectroscopy. The optic parameters for the multilayer model are determined by solving the ellipsometry inverse problem using the numerical algorithm developed earlier involving Tikhonov´s regularisation technique. Front the multiangle ellipsometry data the damage levels in the amorphous Si layer are estimated as function of the implantation and heat treatments conditions