Title :
Effect of γ-radiation on the transition layer in metal-semiconductor contacts
Author :
Belyaev, A.A. ; Chaika, G.E. ; Il´in, I.Yu. ; Konakova, R.V. ; Lyapin, V.G. ; Milenin, V.V. ; Rengevych, O.E. ; Soloviev, E.A. ; Tagaev, M.B. ; Voitsikhovskiy, D.I.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
An effect of γ-radiation on atomic diffusion in the metal-semiconductor heterostructures is considered theoretically. Diffusion of impurities into the transition layer results in the potential redistribution between the depletion and the transition layers. An excess current through the barrier via an “intermediate” level occurs. The calculated results are compared with the experimental data
Keywords :
diffusion; gamma-ray effects; impurity distribution; semiconductor-metal boundaries; γ irradiation; atomic diffusion; depletion layer; excess current; impurity redistribution; metal-semiconductor heterostructure; transition layer; Atomic layer deposition; Atomic measurements; Charge carriers; Current measurement; Electrons; Neodymium; Permittivity measurement; Physics; Poisson equations; Semiconductor materials;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732366
