DocumentCode
331017
Title
Effect of γ-radiation on the transition layer in metal-semiconductor contacts
Author
Belyaev, A.A. ; Chaika, G.E. ; Il´in, I.Yu. ; Konakova, R.V. ; Lyapin, V.G. ; Milenin, V.V. ; Rengevych, O.E. ; Soloviev, E.A. ; Tagaev, M.B. ; Voitsikhovskiy, D.I.
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Volume
1
fYear
1998
fDate
6-10 Oct 1998
Firstpage
259
Abstract
An effect of γ-radiation on atomic diffusion in the metal-semiconductor heterostructures is considered theoretically. Diffusion of impurities into the transition layer results in the potential redistribution between the depletion and the transition layers. An excess current through the barrier via an “intermediate” level occurs. The calculated results are compared with the experimental data
Keywords
diffusion; gamma-ray effects; impurity distribution; semiconductor-metal boundaries; γ irradiation; atomic diffusion; depletion layer; excess current; impurity redistribution; metal-semiconductor heterostructure; transition layer; Atomic layer deposition; Atomic measurements; Charge carriers; Current measurement; Electrons; Neodymium; Permittivity measurement; Physics; Poisson equations; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.732366
Filename
732366
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