Title :
Experiments on electron-beam irradiation effects on junction field effect transistors
Author :
Codreann, C. ; Iliescu, Elena
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
The paper describes some results concerning electron-beam irradiation effects on dual monolithic n-channel junction field effect transistors. Devices were gradually irradiated up to 8 Mrad in steps of 1 Mrad or 2 Mrad at room temperature. After each irradiation operation, their electrical parameters were measured and finally we have analyzed the structural modifications in devices and their irradiation hardness
Keywords :
electron beam effects; junction gate field effect transistors; radiation hardening (electronics); 8 Mrad; device structure; dual monolithic n-channel junction field effect transistor; electrical parameters; electron beam irradiation; radiation hardness; Current measurement; Doping; Electrons; FETs; Laser theory; Physics; Plasma devices; Plasma temperature; Space vector pulse width modulation; Substrates;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732373
