Title :
On the operation mode of bidirectional lightning surge protection devices
Author :
Flores, D. ; Jordå, X. ; Hidalgo, S. ; Fernández, J. ; Millán, J.
Author_Institution :
Centro Nacional de Microelectronica, Barcelona, Spain
Abstract :
Modern telecommunication equipment has to be protected from high voltage, long period disturbances produced by lightning shocks or capacitive coupling. Power semiconductor devices are commonly used in parallel protection up to 4 kV, 150 A transient peaks. This paper analyses the operation mode of an optimised bidirectional breakover diode (BBD) and experimental results are reported from fabricated 180 V BBD devices with holding current values in the range of 150-250 mA
Keywords :
lightning protection; power semiconductor diodes; surge protection; telecommunication equipment; 150 A; 150 to 250 mA; 180 V; 4 kV; bidirectional breakover diode; holding current; lightning surge protection; power semiconductor device; telecommunication equipment; Breakdown voltage; Electric shock; Electric variables; Lightning; Power semiconductor devices; Semiconductor diodes; Surge protection; Telephony; Thyristors; Voltage control;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732375
