Title :
The efficiency increase for integrated lateral dual collector magnetotransistor
Author :
Neagoe, Otilia ; Avram, Marioara ; Ravariu, Cristian
Author_Institution :
Nat. Inst. of Res. & Dev. for Microtechnol., Bucharest, Romania
Abstract :
The paper presents a theoretical investigation in lateral dual collector bipolar magnetotransistors, from the point of view of the device efficiency increase. The parasitic effect suppression of the vertical EBS pnp (Emitter-Base-Substrate) is studied in order to achieve this goal. Three methods of increasing efficiency are discussed
Keywords :
bipolar transistors; magnetoresistive devices; device efficiency; lateral dual collector bipolar magnetotransistor; parasitic effect; vertical emitter-base-substrate pump; Anisotropic magnetoresistance; Etching; Magnetic anisotropy; Magnetic devices; Magnetic fields; P-n junctions; Perpendicular magnetic anisotropy; Protection; Research and development; Silicon;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732379
