DocumentCode
331025
Title
The efficiency increase for integrated lateral dual collector magnetotransistor
Author
Neagoe, Otilia ; Avram, Marioara ; Ravariu, Cristian
Author_Institution
Nat. Inst. of Res. & Dev. for Microtechnol., Bucharest, Romania
Volume
1
fYear
1998
fDate
6-10 Oct 1998
Firstpage
289
Abstract
The paper presents a theoretical investigation in lateral dual collector bipolar magnetotransistors, from the point of view of the device efficiency increase. The parasitic effect suppression of the vertical EBS pnp (Emitter-Base-Substrate) is studied in order to achieve this goal. Three methods of increasing efficiency are discussed
Keywords
bipolar transistors; magnetoresistive devices; device efficiency; lateral dual collector bipolar magnetotransistor; parasitic effect; vertical emitter-base-substrate pump; Anisotropic magnetoresistance; Etching; Magnetic anisotropy; Magnetic devices; Magnetic fields; P-n junctions; Perpendicular magnetic anisotropy; Protection; Research and development; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.732379
Filename
732379
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