• DocumentCode
    331028
  • Title

    Cobalt-manganese oxide thin films thermistors obtained by MOD

  • Author

    Dragoi, Viorel ; Alexe, M.

  • Author_Institution
    Nat. Inst. of Mater. Phys., Bucharest, Romania
  • Volume
    1
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    297
  • Abstract
    Co1.4Mn1.6O4 (CMO) thin films were deposited onto silicon by Metalorganic Decomposition (MOD) method. Structure, composition and morphology were investigated by Electron Dispersive X-Ray Spectroscopy (EDX) and X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). Electrical measurements showed possible applications as negative temperature coefficient (NTC) thermistors
  • Keywords
    X-ray chemical analysis; X-ray diffraction; cobalt compounds; liquid phase deposited coatings; manganese compounds; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; thermistors; Co1.4Mn1.6O4; NTC thermistor; X-ray diffraction; cobalt-manganese oxide thin film; composition; electron dispersive X-ray spectroscopy; metalorganic decomposition; morphology; scanning electron microscopy; silicon substrate; structure; Dispersion; Morphology; Scanning electron microscopy; Semiconductor thin films; Silicon; Spectroscopy; Sputtering; Thermistors; Transistors; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.732382
  • Filename
    732382
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=331028