Title :
Correlation between chemical composition of transitional layer and electro-physical properties of Me-n-InP Schottky barriers
Author :
Korotchenkov, G.S. ; Bejan, N.P.
Author_Institution :
Lab. of Microelectron., Tech. Univ. of Moldova, Kishinev, Moldova
Abstract :
In this report results of the analysis of tunnel transparency and physical-chemical properties of transitional layer between metal and InP real surface have been presented. It was determined that electro-physical properties of Me-n-InP Schottky barriers are correlated with chemical composition of InP own oxides. For explanation of shown effects, it was proposed the model of transitional layer and mechanism of it´s property changing during thermal treatment
Keywords :
III-V semiconductors; Schottky barriers; heat treatment; indium compounds; oxidation; semiconductor-metal boundaries; tunnelling; InP; chemical composition; electro-physical properties; metal-n-InP Schottky barrier; surface oxide; thermal treatment; transitional layer; tunnel transparency; Chemicals; Electromagnetic wave absorption; Electrons; Indium phosphide; Microelectronics; Oxidation; Schottky barriers; Spectroscopy; Surface charging; Tunneling;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732384
