Title :
High temperature Ti-Al-based ohmic contacts to p-6H-SiC
Author :
Andreev, A.N. ; Rastegaeva, M.G. ; Babanin, A.I. ; Yagovkina, M.A. ; Rendokova, S.V. ; Savkina, N.S.
Author_Institution :
A.F. Ioffe Phys.-Tech. Inst. Acad. of Sci., St. Petersburg, Russia
Abstract :
Low-resistance ohmic contacts (10-4 Ohm cm2 at Na-Nd=1019 cm-3) based on Ti-Al composition were prepared to p-6H-SiC grown by various techniques. This contacts demonstrate exellent reproductivity and the ones can operate at the environment temperatures up to 550°C and densities of direct current up to 104 A/cm2. Structure and composition of contact coating were studied by AES and SIMS layer-by-layer technique and X-ray phase analysis. Advanced study of electrical characteristic of Ti-Al-based ohmic contacts was carried out
Keywords :
Auger electron spectra; X-ray diffraction; aluminium alloys; annealing; contact resistance; high-temperature electronics; ohmic contacts; secondary ion mass spectra; semiconductor materials; silicon compounds; titanium alloys; 550 C; AES; DC current density; SIMS; SiC-TiAl; X-ray phase analysis; annealing; composition; electrical characteristics; high temperature Ti-Al ohmic contact; layer-by-layer technique; p-6H-SiC; specific contact resistance; structure; Aluminum; Annealing; Coatings; Contact resistance; Doping; Epitaxial layers; Ohmic contacts; Plasma temperature; Silicon carbide; Temperature dependence;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732387
