An accurate method of 6H-SiC PIN structures parameter extraction using C-V characteristics

Our paper reports an optimal parameter extraction method based on a new model for the high frequency capacitance-voltage characteristics of the 6H-SiC boron doped junction. The C-V model confirms the presence of two type regions (p^- and n^-) in the quasi-intrinsic layer induced by boron doping. The extracted values of the net doping of these zones (6-10×10¹² cm^-3) are in good agreement with previously reported data. In contrast, the thickness of the quasi-intrinsic layer, about twice the epilayer´s width, proves the expansion of the quasi-intrinsic region in the substrate