Steady-state lifetime of the nonequilibrium carriers in proton irradiated 6H-SiC pn structures

Author

Chuk, A. M Strel ; Kozlovski, V.V. ; Savkina, N.S. ; Rastegaeva, M.G. ; Andreev, A.N.

Author_Institution

Groupe d´´Etudes des Semicond., Univ. des Sci. et Tech. du Languedoc, Montpellier, France

Volume

1

fYear

1998

fDate

6-10 Oct 1998

Firstpage

319

Abstract

The effect of proton irradiation on the value of the steady state lifetime of the nonequilibrium carriers in 6H-SiC epitaxial pn structures was investigated. The lifetime was determined as parameter of the Sah-Noyce-Shockley model, which was used for interpretation of the forward currents at current densities 10^-6<J<10⁰ A/cm². The irradiation dose 3.6 10¹⁴ cm^-2 decreased the lifetime of nonequilibrium carriers for deep-level recombination in the space charge region by up to 2 orders of magnitude. The irradiation dose of 1.8 10¹⁵ cm^-2, or anneal in the range 300-800 K did not change the lifetime

Keywords

carrier lifetime; deep levels; electron-hole recombination; p-n junctions; proton effects; semiconductor epitaxial layers; semiconductor materials; silicon compounds; space charge; 300 to 800 K; 6H-SiC epitaxial p-n junction; Sah-Noyce-Shockley model; SiC; deep level recombination; nonequilibrium carrier lifetime; proton irradiation; space charge region; Annealing; Current density; Current-voltage characteristics; Cyclotrons; Photonic band gap; Protons; Space charge; Steady-state; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.732390

Filename

732390