DocumentCode
331033
Title
Dependence of SiC/SiO2 interface quality on substrate and dopant type
Author
Berverich, S. ; Godignon, P. ; Millán, J. ; Locatelli, M.L. ; Brezeanu, G. ; Badila, M. ; Lebedev, A. ; Hartnagel, H.L.
Author_Institution
Centro Nacional de Microelectron., Bellaterra, Spain
Volume
1
fYear
1998
fDate
6-10 Oct 1998
Firstpage
323
Abstract
We investigated the electrical properties of dry thermal oxide on n and p-type Si-faced 6H and 4H-SiC wafers using capacitance-voltage measurements. The experimental CV data have been compared with simulated CV curves including oxide charge and interface state density determined previously using the conductance technique including band bending fluctuations
Keywords
interface states; semiconductor materials; semiconductor-insulator boundaries; silicon compounds; 4H-SiC substrate; 6H-Si substrate; SiC-SiO2; SiC/SiO2 interface; band bending fluctuations; capacitance-voltage characteristics; conductance; dry thermal oxide; electrical properties; interface state density; n-type dopant; oxide charge; p-type dopant; Capacitance measurement; Cleaning; Fluctuations; Frequency measurement; Interface states; Neodymium; Silicon carbide; Substrates; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.732392
Filename
732392
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