Title :
Dependence of SiC/SiO2 interface quality on substrate and dopant type
Author :
Berverich, S. ; Godignon, P. ; Millán, J. ; Locatelli, M.L. ; Brezeanu, G. ; Badila, M. ; Lebedev, A. ; Hartnagel, H.L.
Author_Institution :
Centro Nacional de Microelectron., Bellaterra, Spain
Abstract :
We investigated the electrical properties of dry thermal oxide on n and p-type Si-faced 6H and 4H-SiC wafers using capacitance-voltage measurements. The experimental CV data have been compared with simulated CV curves including oxide charge and interface state density determined previously using the conductance technique including band bending fluctuations
Keywords :
interface states; semiconductor materials; semiconductor-insulator boundaries; silicon compounds; 4H-SiC substrate; 6H-Si substrate; SiC-SiO2; SiC/SiO2 interface; band bending fluctuations; capacitance-voltage characteristics; conductance; dry thermal oxide; electrical properties; interface state density; n-type dopant; oxide charge; p-type dopant; Capacitance measurement; Cleaning; Fluctuations; Frequency measurement; Interface states; Neodymium; Silicon carbide; Substrates; Temperature; Voltage;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732392
