Title :
Study of Ni-based ohmic contacts fabricated on n-6H-SiC polar faces
Author :
Rastegaeva, M.G. ; Andreev, A.N. ; Bobanin, A.I. ; Mokhov, E.N. ; Sanki, V.I.
Author_Institution :
A.F. Ioffe Phys.-Tech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Electrical characteristics and composition of interface region were studied for Ni-based ohmic contacts prepared on the n-6H-SiC polar faces at the various annealing temperatures. Specific contact resistance as well as composition of interface region depends strongly on annealing temperature and surface orientation. The data are reported on dependence of specific contact resistance on uncompensated impurity concentration. Fabricated ohmic contacts show stable electrical characteristics at the environment temperatures up to 550°C and current densities up to 10 4 A/cm2
Keywords :
annealing; contact resistance; nickel; ohmic contacts; polar semiconductors; silicon compounds; 550 C; Ni ohmic contact; SiC-Ni; annealing; electrical characteristics; impurity concentration; interfacial composition; n-6H-SiC polar face; specific contact resistance; surface orientation; Annealing; Charge carriers; Coatings; Contact resistance; Lattices; Ohmic contacts; Oxidation; Silicon carbide; Space charge; Temperature;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732394
