On the Possibility to Reduce the Power Consumption of FET-Based Amplifiers by the Drastic Reduction in Supply Voltages

This paper reports on the successful development of an efficient method of the power consumption reducing without recourse either to cooling or to transistor periphery scaling. An approach proposed is based on applying the field-effect transistor (FET) having (initially, in saturated I-V region) an excessive-high cut-off-frequency and sacrificing their gain after changing to linear I-V region. Discussions of the theoretical grounding and experimental results of the implementation of this method to the design of low-noise amplifiers (LNAs) for radiofrequency (RF) as well as microwave bands, are discussed.