DocumentCode :
331063
Title :
A low threshold and narrow-beam divergence n-type modulation-doped strained MQW laser array for parallel optical interconnection
Author :
Nakahara, K. ; Taniwatari, T. ; Haga, T. ; Toyonaka, T. ; Uomi, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume :
1
fYear :
1998
fDate :
20-24 Sep 1998
Firstpage :
71
Abstract :
It is experimentally demonstrated that low threshold current and narrow beam divergence are achieved in an n-type modulation-doped MQW laser with a laterally tapered active layer on application to parallel optical interconnections
Keywords :
laser beams; optical interconnections; parallel architectures; quantum well lasers; semiconductor doping; laterally tapered active layer; low threshold; n-type modulation-doped MQW laser; narrow-beam divergence n-type modulation-doped strained MQW laser array; parallel optical interconnection; Epitaxial layers; Fiber lasers; Laser beams; Laser modes; Optical arrays; Optical interconnections; Power generation; Power lasers; Quantum well devices; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication, 1998. 24th European Conference on
Conference_Location :
Madrid
Print_ISBN :
84-89900-14-0
Type :
conf
DOI :
10.1109/ECOC.1998.732441
Filename :
732441
Link To Document :
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