DocumentCode
331063
Title
A low threshold and narrow-beam divergence n-type modulation-doped strained MQW laser array for parallel optical interconnection
Author
Nakahara, K. ; Taniwatari, T. ; Haga, T. ; Toyonaka, T. ; Uomi, K.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
1
fYear
1998
fDate
20-24 Sep 1998
Firstpage
71
Abstract
It is experimentally demonstrated that low threshold current and narrow beam divergence are achieved in an n-type modulation-doped MQW laser with a laterally tapered active layer on application to parallel optical interconnections
Keywords
laser beams; optical interconnections; parallel architectures; quantum well lasers; semiconductor doping; laterally tapered active layer; low threshold; n-type modulation-doped MQW laser; narrow-beam divergence n-type modulation-doped strained MQW laser array; parallel optical interconnection; Epitaxial layers; Fiber lasers; Laser beams; Laser modes; Optical arrays; Optical interconnections; Power generation; Power lasers; Quantum well devices; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 1998. 24th European Conference on
Conference_Location
Madrid
Print_ISBN
84-89900-14-0
Type
conf
DOI
10.1109/ECOC.1998.732441
Filename
732441
Link To Document