High reliability, high-yield, high modulation bandwidth, low threshold current 1.55 μm MQW laser by new in-situ etching technique

Author

Bertone, D. ; Campi, R. ; Fang, R.Y. ; Meliga, M. ; Morello, G. ; Murgia, S. ; Paoletti, R.

Author_Institution

CSELT, Torino, Italy

Volume

1

fYear

1998

fDate

20-24 Sep 1998

Firstpage

75

Abstract

For the first time to our knowledge, an InP based Fabry-Perot MQW semiconductor laser is obtained by using an in-situ etching technique. Good static and dynamic laser characteristics together with high process yield and reliability confirm the validity of this new technological process

Keywords

III-V semiconductors; etching; indium compounds; infrared sources; laser transitions; optical fabrication; optical transmitters; quantum well lasers; semiconductor device reliability; 1.55 μm MQW laser; 1.55 mum; InP; InP based Fabry-Perot MQW semiconductor laser; dynamic laser characteristics; high modulation bandwidth; high process yield; high reliability; high-yield; in-situ etching technique; low threshold current; static laser characteristics; technological process; Bandwidth; Chemical lasers; Etching; Indium phosphide; Inductors; MOCVD; Optical devices; Quantum well devices; Semiconductor lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 1998. 24th European Conference on

Conference_Location

Madrid

Print_ISBN

84-89900-14-0

Type

conf

DOI

10.1109/ECOC.1998.732443

Filename

732443