DocumentCode :
331092
Title :
Decay behaviour of UV-induced defects in Ge-doped SiO2 glass
Author :
Ohama, M. ; Fujiwara, T. ; Ikushima, A.J.
Author_Institution :
Res. Center for Adv. Photonic Technol., Toyota Technol. Inst., Nagoya, Japan
Volume :
1
fYear :
1998
fDate :
20-24 Sep 1998
Firstpage :
141
Abstract :
Decay behaviour of photo-induced defects in a Ge-doped SiO2 glass with photosensitivity and 2nd-order optical nonlinearity has been presented. It has been found that the decay of induced GeE´ in a UV-irradiated glass is quite different from that in a UV-poled glass
Keywords :
germanate glasses; optical glass; optical harmonic generation; sensitivity; 2nd-order optical nonlinearity; Ge-doped SiO2 glass; SiO2:Ge; UV-induced defects; UV-irradiated glass; UV-poled glass; decay behaviour; photo-induced defects; photosensitivity; Electromagnetic wave absorption; Energy measurement; Glass; Laser beam cutting; Optical harmonic generation; Optical pulses; Photonic crystals; Photorefractive effect; Preforms; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication, 1998. 24th European Conference on
Conference_Location :
Madrid
Print_ISBN :
84-89900-14-0
Type :
conf
DOI :
10.1109/ECOC.1998.732474
Filename :
732474
Link To Document :
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