Doping type dependence of 1.3 μm modulation-doped-MQW lasers under zero-bias modulation for high-speed optical interconnects

Author

Uomi, K. ; Nakahara, K. ; Niwa, A.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

1

fYear

1998

fDate

20-24 Sep 1998

Firstpage

197

Abstract

The importance of the doping type for 1.3-μm modulation-doped MQW lasers is extensively investigated for application to high-bit-rate optical interconnects under laser modulation without DC bias. We investigated, for the first time, the applicability of both p- and n-type modulation doped (MD) MQW lasers toward obtaining a clear eye opening under zero-bias modulation. We focused on the aspects of turn-on delay time and relaxation oscillation frequency. Our findings confirmed that the p-type MD-MQW laser is attractive for zero-bias modulation at operation over 2 Gbit/s

Keywords

carrier lifetime; electro-optical modulation; high-speed optical techniques; optical fibre networks; optical interconnections; optical transmitters; quantum well lasers; 1.3 μm modulation-doped-MQW lasers; 1.3 mum; 1.3-μm modulation-doped MQW lasers; DC bias; MQW lasers; clear eye opening; doping type dependence; high-bit-rare optical interconnects; high-speed optical interconnects; laser modulation; n-type modulation doped; optical transmitters; p-type MD-MQW laser; p-type modulation doped; relaxation oscillation frequency; turn-on delay time; zero-bias modulation; Charge carrier lifetime; Delay effects; Doping; Epitaxial layers; Frequency; Optical modulation; Pulse modulation; Quantum well devices; Semiconductor lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 1998. 24th European Conference on

Conference_Location

Madrid

Print_ISBN

84-89900-14-0

Type

conf

DOI

10.1109/ECOC.1998.732500

Filename

732500