Monolithically integrated WDM channel selectors on InP substrates

Author

Ishii, H. ; Sanjoh, H. ; Kohtoku, M. ; Oku, S. ; Kadota, Y. ; Yoshikuni, Y. ; Kondo, Y. ; Kishi, K.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

1

fYear

1998

fDate

20-24 Sep 1998

Firstpage

329

Abstract

8-channel WDM channel selectors were fabricated on InP substrates. A compact device size of 5.2 mm×3.6 mm is achieved with a combination of deep-ridge waveguides and buried waveguides. The device can select an arbitrary signal from WDM signals with a low crosstalk of less than -40 dB

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; multiplexing equipment; optical communication equipment; optical couplers; optical crosstalk; optical fabrication; optical planar waveguides; optical waveguide filters; ridge waveguides; substrates; wavelength division multiplexing; InGaAsP; InGaAsP-InP; InP; InP substrates; WDM channel selectors; WDM signals; arbitrary signal; buried waveguides; compact device size; deep-ridge waveguides; fabrication; low crosstalk; monolithically integrated WDM channel selectors; Arrayed waveguide gratings; Etching; Indium phosphide; Optical arrays; Optical losses; Optical waveguides; Semiconductor optical amplifiers; Substrates; Waveguide lasers; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 1998. 24th European Conference on

Conference_Location

Madrid

Print_ISBN

84-89900-14-0

Type

conf

DOI

10.1109/ECOC.1998.732572

Filename

732572