Title :
Investigations on 6.5kV Trench IGBT and adapted EmCon Diode
Author :
Bauer, J.G. ; Duetemeyer, T. ; Falck, E. ; Schaeffer, C. ; Schmidt, G. ; Schulze, H.
Author_Institution :
Infineon Technol. AG, Neubiberg
Abstract :
The performance of a new 6.5 kV trench IGBT was investigated. The trench technology utilizing the field stop concept was successfully applied to a 6.5 kV trench IGBT (IGBT3). A significant trade off improvement of the on state losses VCE(sat) and the switching losses is demonstrated. An additional improvement was achieved by introducing VLD edge termination into the IGBT3 technology. This leads to a VCE(sat) reduction of more than 30%, and to a reduction of the switching losses. Finally a 20% increased output current of the modules will be achieved.
Keywords :
insulated gate bipolar transistors; losses; power semiconductor diodes; power semiconductor switches; power transistors; IGBT; adapted EmCon diode; switching losses; trench technology; voltage 6.5 kV; Charge carrier processes; Conductivity; Current measurement; Insulated gate bipolar transistors; Power semiconductor devices; Semiconductor diodes; Solid modeling; Switching loss; Temperature measurement; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294918
