Investigations on 6.5kV Trench IGBT and adapted EmCon Diode

Author

Bauer, J.G. ; Duetemeyer, T. ; Falck, E. ; Schaeffer, C. ; Schmidt, G. ; Schulze, H.

Author_Institution

Infineon Technol. AG, Neubiberg

fYear

2007

fDate

27-31 May 2007

Firstpage

5

Lastpage

8

Abstract

The performance of a new 6.5 kV trench IGBT was investigated. The trench technology utilizing the field stop concept was successfully applied to a 6.5 kV trench IGBT (IGBT³). A significant trade off improvement of the on state losses V_CE(sat) and the switching losses is demonstrated. An additional improvement was achieved by introducing VLD edge termination into the IGBT³ technology. This leads to a V_CE(sat) reduction of more than 30%, and to a reduction of the switching losses. Finally a 20% increased output current of the modules will be achieved.

Keywords

insulated gate bipolar transistors; losses; power semiconductor diodes; power semiconductor switches; power transistors; IGBT; adapted EmCon diode; switching losses; trench technology; voltage 6.5 kV; Charge carrier processes; Conductivity; Current measurement; Insulated gate bipolar transistors; Power semiconductor devices; Semiconductor diodes; Solid modeling; Switching loss; Temperature measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on

Conference_Location

Jeju Island

Print_ISBN

1-4244-1095-9

Electronic_ISBN

1-4244-1096-7

Type

conf

DOI

10.1109/ISPSD.2007.4294918

Filename

4294918