Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss

Author

Onozawa, Y.

fYear

2007

fDate

27-31 May 2007

Firstpage

13

Lastpage

16

Abstract

This paper describes the next generation 1200 V trench-gate FS-IGBT chip technologies based on the concepts of the "low noise" and "low power dissipation". The novel design of the IGBT surface structure has been able to realize 36% reduction of the turn-on power dissipation when compared to the conventional IGBTs under the operating condition to set the same FWD reverse recovery dv/dt. Furthermore, the trade-off relationship between the on-state voltage and the turn-off power dissipation has been improved about 20% without the turn-off oscillation even in the extreme condition.

Keywords

electromagnetic interference; insulated gate bipolar transistors; power semiconductor switches; power transistors; EMI noise; FWD reverse recovery; low noise concepts; low power dissipation concepts; switching loss; trench-gate FS-IGBT; turn-off power dissipation; turn-on power dissipation; voltage 1200 V; Controllability; Electric variables; Electromagnetic interference; Insulated gate bipolar transistors; Noise generators; Noise reduction; Power dissipation; Semiconductor device noise; Switching loss; Voltage; EMI noise; FWD reverse recovery dv/dt; Floating P-base layer; Turn-off oscillation; Turn-on di/dt controllability;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on

Conference_Location

Jeju Island

Print_ISBN

1-4244-1095-9

Electronic_ISBN

1-4244-1096-7

Type

conf

DOI

10.1109/ISPSD.2007.4294920

Filename

4294920