A 800 V Hybrid IGBT Having a High-Speed Internal Diode for Power-Supply Applications

A new lateral 800 V hybrid IGBT with a high-speed internal diode is proposed for switch-mode power supply (SMPS) applications. The hybrid IGBT operates as a MOS only when the collector/drain current is small. Then, the device shifts to IGBT operation with an RonA of 72 mOmegacm² when the collector voltage is 6 V. The switching speed of the device is made fast enough to turn off in around 100 nsec, achieved through several methods such as a shorted anode structure, a lightly- doped collector, and electron irradiation. Besides that, the hybrid IGBT has a high-speed internal diode which achieves around 100 nsec of reverse recovery time (trr). The device can be fabricated easily without any expensive or complicated processes like epitaxial growth or trench etching. A 70 W flyback SMPS application using the hybrid IGBT is experimentally demonstrated.