Title :
The Corrugated P-Base IGCT - a New Benchmark for Large Area SQA Scaling
Author :
Wikstrom, Tobias ; Stiasny, Thomas ; Rahimo, Munaf ; Cottet, Didier ; Streit, Peter
Author_Institution :
ABB Schweiz AG, Lenzburg
Abstract :
A 91 mm diameter IGCT with extraordinary safe operating area (SOA) is presented in this paper. The power density at turn-off reached values as high as 700 W/cm2, which is twice the previously reported SOA limit for devices with a comparable diameter. The improvement was achieved by masking one of the p-base diffusions, giving the p-base a corrugated appearance as well as improving the gate circuit.
Keywords :
thyristors; corrugated p-base IGCT; extraordinary safe operating area; gate circuit; integrated gate commutated thyristor; size 91 mm; Equivalent circuits; Impedance; Inductors; Insulated gate bipolar transistors; PIN photodiodes; Power semiconductor devices; Semiconductor optical amplifiers; Thyristors; Turning; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294924
