Depth-Resolved Temperature Measurements on Power Devices under Transient Conditions

Author

Perpiñà, X. ; Jordà, X. ; Vellvehi, M. ; Mermet-Guyennet, M. ; Millán, J. ; Mestres, N.

Author_Institution

Centre Nacional de Microelectron. (CNM-CSIC), Bellaterra

fYear

2007

fDate

27-31 May 2007

Firstpage

33

Lastpage

36

Abstract

This paper shows a temperature optical probing technique based on transmission Fabry-Perot interferometry. Their feasibility is demonstrated with a specifically designed thermal test chip device and by also using another well-known thermometry method. Finally, the temperature within the drift region of a PT-IGBT is directly measured during its on- and off-state.

Keywords

Fabry-Perot interferometers; insulated gate bipolar transistors; interferometry; thermometers; PT-IGBT; depth-resolved temperature measurements; drift region; power devices; temperature optical probing technique; thermal test chip device; thermometry method; transient conditions; transmission Fabry-Perot interferometry; Fabry-Perot; Optical films; Optical interferometry; Optical reflection; Power electronics; Power measurement; Power semiconductor devices; Refractive index; Solids; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on

Conference_Location

Jeju Island

Print_ISBN

1-4244-1095-9

Electronic_ISBN

1-4244-1096-7

Type

conf

DOI

10.1109/ISPSD.2007.4294925

Filename

4294925