Demonstration of high frequency and 10A operation in 12V 1 chip DC/DC converter IC using bump technology

Author

Nakamura, Kazutoshi ; Matsushita, Ken´ichi ; Naka, Toshiyuki ; Ikeda, Yoshiko ; Yasuhara, Norio ; Endo, Koichi ; Suzuki, Fumito ; Takahashi, Morio ; Yamaguchi, Masakazu ; Nakagawa, Akio

Author_Institution

Toshiba Corp. Semicond. Co., Kawasaki

fYear

2007

fDate

27-31 May 2007

Firstpage

45

Lastpage

48

Abstract

This paper presents 12 V 10A 1 chip DC/DC converter IC based on the low cost 0.6 mum BiCD process. The chip adopted low impedance metal bump technology and a high speed gate driving technique for large LDMOS, what we call "distributed driver circuit". The fabricated chip achieves that the on resistance of 20 V output LDMOS is 9.7mOmega(@drain current=5A, gate voltage=5 V) and the maximum efficiency is 88.9% at output current 5A when the input voltage, the output voltage and switching frequency is 12 V, 1.3 V and 780 KHz, respectively.

Keywords

DC-DC power convertors; driver circuits; power integrated circuits; BiCD process; DC-DC converter IC; LDMOS; bump technology; current 10 A; current 5 A; distributed driver circuit; frequency 780 kHz; high frequency demonstration; high speed gate driving technique; low impedance metal bump technology; voltage 1.3 V; voltage 12 V; voltage 5 V; Costs; DC-DC power converters; Driver circuits; Frequency conversion; Impedance; Integrated circuit interconnections; Parasitic capacitance; Switching circuits; Switching frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on

Conference_Location

Jeju Island

Print_ISBN

1-4244-1095-9

Electronic_ISBN

1-4244-1096-7

Type

conf

DOI

10.1109/ISPSD.2007.4294928

Filename

4294928