Title :
I–V model for short gate length ion-implanted GaAs OPFETs
Author :
Tripathi, Shweta ; Jit, S.
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Abstract :
The current-voltage characteristics for optically controlled short gate-length ion-implanted GaAs MESFET has been presented in this paper. The illumination sensitivity of the drain-source current has been analyzed. It is shown that good agreements are obtained between the developed model and the numerical simulation data obtained by ATLAS™ two-dimensional (2D) device simulator.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; numerical analysis; optical control; semiconductor device models; ATLAS two-dimensional device simulator; GaAs; I-V model; current-voltage characteristics; drain-source current; illumination sensitivity; ion-implanted GaAs MESFET; ion-implanted GaAs OPFET; numerical simulation; optical control; short gate length; Analytical models; Computational modeling; Gallium arsenide; Logic gates; MESFETs; Numerical models; Optical signal processing;
Conference_Titel :
Multimedia, Signal Processing and Communication Technologies (IMPACT), 2011 International Conference on
Conference_Location :
Aligarh
Print_ISBN :
978-1-4577-1105-3
DOI :
10.1109/MSPCT.2011.6150441
