Title :
600V / 100A Broad-Buffer Diode
Author :
Nemoto, Michio ; Nakazawa, Haruo
Author_Institution :
Fuji Electr. Adv. Technol. Co. Ltd., Nagano
Abstract :
600V/100Amps broad-buffer diode has been investigated. The pinning effect of space-charge extension has been optimized to inhibit snappy recovery under high conunutating di/dt condition (> 4000A/(mus cm2)), so that the reverse recovery loss has been dramatically reduced with decreasing the thickness of N- drift layer. The turn-on loss of the IGBT has been also cut down with degreasing gate resistance under 10 Omega, without abrupt spike of cathode-anode voltage waveform during reverse recovery. Both the decrease in turn-on loss and the suppression of snappy recovery would bring the reduction of 10% in PWM inverter loss.
Keywords :
PWM invertors; insulated gate bipolar transistors; power semiconductor diodes; IGBT; PWM inverter; broad-buffer diode; current 100 A; drift layer; reverse recovery loss; snappy recovery; space-charge extension; voltage 600 V; Anodes; Buffer layers; Electromagnetic interference; Insulated gate bipolar transistors; Noise reduction; Pulse width modulation inverters; Semiconductor diodes; Space charge; Substrates; Voltage; Broad-Buffer; Diode; Inverter; Low-loss; Soft recovery; Turn-on;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294943
