• DocumentCode
    3312604
  • Title

    1200V Emcon4 freewheeling diode - a soft alternative

  • Author

    Hille, F. ; Bassler, M. ; Schulze, H. ; Falck, E. ; Felsl, H.P. ; Schieber, A. ; Mauder, A.

  • Author_Institution
    Infineon Technol. AG, Neubiberg
  • fYear
    2007
  • fDate
    27-31 May 2007
  • Firstpage
    109
  • Lastpage
    112
  • Abstract
    Freewheeling diodes are one of the major components for modern IGBT modules and have to satisfy a number of demands. Especially in hard switching applications, such as inverters for industrial drives or UPS, a soft switching behavior of the diode is - besides low losses and high ruggedness - of major interest. A high softness reduces EMI problems and enables a faster turn-on of the IGBT. In this work, a deep field stop concept is introduced into the next generation of Infineon\´s "Emcon" freewheeling diode, which yields a significant softness increase. The basic function of this field stop concept is illustrated by device simulations, and experimental results for the two realized device optimizations are presented.
  • Keywords
    electromagnetic interference; insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; EMI; Emcon4 freewheeling diode; IGBT modules; soft switching behavior; voltage 1200 V; Anodes; Cathodes; Doping profiles; Insulated gate bipolar transistors; Inverters; Lithography; Platinum; Power semiconductor devices; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
  • Conference_Location
    Jeju Island
  • Print_ISBN
    1-4244-1095-9
  • Electronic_ISBN
    1-4244-1096-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2007.4294944
  • Filename
    4294944