Title :
Analysis of Operational Degradation of SIC BJT Characteristics
Author :
Gao, Yan ; Huang, Alex Q. ; Zhang, Qingchun ; Krishnaswami, Sumi ; Agarwal, Anant K.
Author_Institution :
North Carolina State Univ., Raleigh
Abstract :
Degradation in both current gain and specific on-resistance of fabricated 4H-SiC BJTs have been observed after a short period of operation. In this paper, 1200 V BJTs were stressed and factors that cause the degradation are proposed. The degradation may be attributed to the increase of the surface states density along the SiC/SiO2 interface, which results in an increased surface recombination current and hence the degradation of the SiC BJT.
Keywords :
power bipolar transistors; silicon compounds; surface recombination; surface states; 4H-SiC; SiC BJT; SiC-SiO2; bipolar junction transistors; current gain; operational degradation; specific on-resistance; surface recombination current; surface states density; voltage 1200 V; Degradation; Doping; Power electronics; Power semiconductor devices; Radiative recombination; Silicon carbide; Stacking; Temperature; Voltage; Wideband;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294947
