Title :
Integrated Compact Modelling of a Planar-Gate Non-Punch-Through 3.3kV-1200A IGBT Module for Insightful Analysis and Realistic Interpretation of the Failure Mechanisms
Author :
Castellazzi, A. ; Ciappa, M. ; Fichtner, W. ; Urresti-Ibanez, J. ; Mermet-Guyennet, M.
Author_Institution :
ETH Zurich, Zurich
Abstract :
This paper proposes the comprehensive electrothermal model development of a multi-chip IGBT power assembly. Intended particularly for reliability investigations, it is based on a mixed physical and behavioral description approach and includes all basic and secondary electro-thermal effects, enabling accurate and insightful simulations. Examples taken from a traction inverter application scenario demonstrate the validity and the usefulness of the proposed solution.
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor device models; semiconductor device reliability; current 1200 A; electrothermal model development; failure mechanisms; integrated compact modelling; multichip IGBT power assembly; planar-gate nonpunchthrough IGBT module; reliability investigations; traction inverter; voltage 3.3 kV; Assembly; Electromagnetic modeling; Electronic mail; Failure analysis; Insulated gate bipolar transistors; Laboratories; P-i-n diodes; Power semiconductor devices; Power system modeling; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294950
