Induction heating system operation by soft switching GaN heterojunction field effect transistors

Author

Niiyama, Y.

fYear

2007

fDate

27-31 May 2007

Firstpage

157

Lastpage

160

Abstract

The induction heating (IH) system with a soft switching was fabricated using AlGaN/GaN heterojunction field effect transistors (HFETs). The operation current and breakdown voltage of an AlGaN/GaN HFET were over 50 A and 800 V, respectively. The specific on-resistance was 10 mOmegacm². The turn-on and turn-off time were less than 20 ns, respectively. We fabricated the IH system with a soft switching circuit which can be driven using normally-on AlGaN/GaN HFETs. The IH system with a soft switching using normally-on AlGaN/GaN HFETs was demonstrated for the first time. Then output power was 3.2 kVA.

Keywords

III-V semiconductors; aluminium compounds; field effect transistor switches; gallium compounds; induction heating; power HEMT; power semiconductor switches; switching circuits; AlGaN; AlGaN-GaN; GaN heterojunction field effect transistors; HFET; apparent power 3.2 kVA; breakdown voltage; current 50 A; induction heating system; soft switching circuit; specific on-resistance; turn-off time; turn-on time; voltage 800 V; Aluminum gallium nitride; FETs; Frequency; Gallium nitride; HEMTs; Heterojunctions; Insulated gate bipolar transistors; MODFETs; MOSFET circuits; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on

Conference_Location

Jeju Island

Print_ISBN

1-4244-1095-9

Electronic_ISBN

1-4244-1096-7

Type

conf

DOI

10.1109/ISPSD.2007.4294956

Filename

4294956